PFAS (per-and poly-fluoroalkyl substances), also known as forever chemicals, are widely used in electronics and semiconductor manufacturing. PFAS are environmentally persistent and bioaccumulative synthetic chemicals, which have recently received considerable regulatory attention. Manufacturing semiconductors and electronics, including integrated circuits (IC), batteries, displays, etc., currently accounts for a staggering 10% of the total PFAS-containing fluoropolymers used in Europe alone. Now, computer system designers have an opportunity to reduce the use of PFAS in semiconductors and electronics at the design phase. In this work, we quantify the environmental impact of PFAS in computing systems, and outline how designers can optimize their designs to use less PFAS. We show that manufacturing an IC design at a 7 nm technology node using Extreme Ultraviolet (EUV) lithography uses 20% less volume of PFAS-containing chemicals versus manufacturing the same design at a 7 nm node using Deep Ultraviolet (DUV) immersion lithography (instead of EUV). We also show that manufacturing an IC design at a 16 nm technology node results in 15% less volume of PFAS than manufacturing the same design at a 28 nm node due to its smaller area.